US Patent Issued to TOWER PARTNERS SEMICONDUCTOR, TOWER SEMICONDUCTOR on Nov. 3 for "Semiconductor memory device" (Japanese, Israeli Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,831, issued on Nov. 3, was assigned to TOWER PARTNERS SEMICONDUCTOR Co. LTD. (Uozu City, Japan) and TOWER SEMICONDUCTOR LTD. (Migdal Haemek, Israel).

"Semiconductor memory device" was invented by Hiroshige Hirano (Nara, Japan), Hiroaki Kuriyama (Toyama, Japan), Atsushi Noma (Toyama, Japan), Evgeny Pikhay (Migdal Haemek, Israel) and Yakov Roizin (Migdal Haemek, Israel).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a plurality of memory cells formed on a semiconductor substrate. Each of the memory cells includes a first floating gate transistor (TFG1), a second floating gate transistor (TFG2), a first erasing elem...