US Patent Issued to Tongwei Solar (Meishan) on Jan. 20 for "N-type monocrystalline silicon double-sided solar cell and preparation method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,564, issued on Jan. 20, was assigned to Tongwei Solar (Meishan) Co. Ltd. (Sichuan, China).

"N-type monocrystalline silicon double-sided solar cell and preparation method thereof" was invented by Gongqing Zhou (Sichuan, China), Kun Hou (Sichuan, China), Shixiang Tan (Sichuan, China) and Taosheng Yuan (Sichuan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are N-type monocrystalline silicon double-sided solar cell and preparation method thereof. Preparation method includes following steps: S1: performing double-sided texturing to obtain N-type monocrystalline silicon with front surface and back surface having first textured structures ...