ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,735, issued on Sept. 9, was assigned to Tokyo Electron Ltd. (Tokyo).
"Plasma processing apparatus" was invented by Shusei Kato (Miyagi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "There is a plasma processing apparatus, comprising: a plasma processing chamber; a substrate support having a ring supporting surface; an insulating ring disposed on the ring supporting surface, the insulating ring having at least three through holes, each of the through holes having upper and lower hole portions, the lower hole portion having a flaring shape; a conductive ring supported by the insulating ring, the conductive ring having at least three grooves on...