US Patent Issued to Tokyo Electron on Sept. 8 for "Substrate processing method and substrate processing apparatus" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,765, issued on Sept. 8, was assigned to Tokyo Electron Ltd. (Tokyo).

"Substrate processing method and substrate processing apparatus" was invented by Tejung Huang (Miyagi, Japan), Shuhei Ogawa (Miyagi, Japan) and Cedric Thomas (Miyagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate processing method in a substrate processing apparatus includes (a) supplying a process gas that contains a gas containing halogen other than fluorine and a gas containing oxygen, to a processing container in which a stage is disposed, the stage being configured to place thereon a workpiece having an etching target film, (b) performing plasma processing o...