US Patent Issued to Tokyo Electron on Sept. 8 for "Film forming method, film forming device, and method for manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,729,423, issued on Sept. 8, was assigned to Tokyo Electron Ltd. (Tokyo).

"Film forming method, film forming device, and method for manufacturing semiconductor device" was invented by Seokhyoung Hong (Nirasaki City, Japan), Tsuyoshi Takahashi (Nirasaki City, Japan) and Taichi Monden (Nirasaki City, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A film forming method includes: providing the substrate into the processing container; forming a metal-based film on the substrate within the processing container; and subsequently, supplying a Si-containing gas into the processing container in a state in which the substrate is provided within the processing...