US Patent Issued to Tokyo Electron on Sept. 29 for "Film forming method and film forming apparatus" (Japanese, American Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,747,496, issued on Sept. 29, was assigned to Tokyo Electron Ltd. (Tokyo).

"Film forming method and film forming apparatus" was invented by Kazuki Goto (Nirasaki City, Japan), Yoshihiro Kato (Nirasaki City, Japan), Junya Suzuki (Nirasaki City, Japan) and Yuji Otsuki (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a SiOC-based film includes: preparing a substrate; forming a SiC-based film on the substrate by using a carbon precursor made of a carbon-containing gas and a silicon precursor made of a silicon-containing gas; forming the SiOC-based film by performing oxidation process on the SiC-based film on the substrate; an...