US Patent Issued to Tokyo Electron on Sept. 29 for "Etching method, plasma processing apparatus, substrate processing system, and program" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,751,227, issued on Sept. 29, was assigned to Tokyo Electron Ltd. (Tokyo).

"Etching method, plasma processing apparatus, substrate processing system, and program" was invented by Takuma Sato (Miyagi, Japan), Shota Yoshimura (Miyagi, Japan) and Shinya Morikita (Miyagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An etching method includes (a) providing a substrate. The substrate includes a first region and a second region. The second region contains silicon oxide, and the first region contains a material different from a material for the second region. The etching method further includes (b) forming a deposit preferentially on the first region w...