US Patent Issued to Tokyo Electron on Oct. 27 for "Substrate processing method and substrate processing apparatus" (Japanese, American Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,858, issued on Oct. 27, was assigned to Tokyo Electron Ltd. (Tokyo).

"Substrate processing method and substrate processing apparatus" was invented by Motoi Takahashi (Miyagi, Japan), Ryutaro Suda (Miyagi, Japan), Maju Tomura (Miyagi, Japan), Takatoshi Orui (Hillsboro, Ore.) and Yoshihide Kihara (Miyagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate processing method includes providing a substrate with a silicon-containing film in a chamber, supplying a process gas containing an HF gas, a phosphorus halide gas, and at least one gas selected from the group consisting of a C4H2F6 gas, a C4H2F8 gas, a C3H2F4 gas, and a C3H2F6 gas into...