US Patent Issued to Tokyo Electron on Oct. 20 for "Substrate processing method and substrate processing apparatus" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,762, issued on Oct. 20, was assigned to Tokyo Electron Ltd. (Tokyo).

"Substrate processing method and substrate processing apparatus" was invented by Miyako Kaneko (Nirasaki City, Japan) and Naoko Suzuki (Nirasaki City, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a substrate processing method and a substrate processing apparatus that improve an etching resistance and suppress a film stress. A substrate processing method of forming a carbon-based film on a substrate includes: a process of placing the substrate on a stage; a first film forming process of forming a first carbon-based film having a first stress; a second film formi...