US Patent Issued to Tokyo Electron on Oct. 14 for "Methods for etching a substrate using a hybrid wet atomic layer etching process" (Texas Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,444,610, issued on Oct. 14, was assigned to Tokyo Electron Ltd. (Tokyo).

"Methods for etching a substrate using a hybrid wet atomic layer etching process" was invented by Paul Abel (Austin, Texas) and Jacques Faguet (Austin, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a hybrid atomic layer etching (ALE) process that combines a gas-phase surface modification step with a liquid-phase dissolution step for etching an exposed material on a substrate disposed within a process chamber. In the hybrid ALE process disclosed herein, a gas-phase reactant is used to modify an exposed surface of the material to create a modifi...