US Patent Issued to Tokyo Electron on Nov. 3 for "Substrate processing method and substrate processing apparatus" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,311, issued on Nov. 3, was assigned to Tokyo Electron Ltd. (Tokyo).

"Substrate processing method and substrate processing apparatus" was invented by Rintaro Higuchi (Kumamoto, Japan), Mitsunori Nakamori (Kumamoto, Japan), Koji Kagawa (Kumamoto, Japan), Kenji Sekiguchi (Yamanashi, Japan), Hajime Nakabayashi (Yamanashi, Japan) and Syuhei Yonezawa (Yamanashi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate processing method includes: (A) preparing a substrate, on which a high-dielectric film having a higher permittivity than a SiO2 film is formed; (B) supplying, to the substrate, a metal solution containing a second metal element having...