US Patent Issued to Tokyo Electron on Nov. 3 for "Method and system for plasma process" (Texas, New York Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,785,039, issued on Nov. 3, was assigned to Tokyo Electron Ltd. (Tokyo).

"Method and system for plasma process" was invented by Evrim Solmaz (Austin, Texas), Du Zhang (Albany, N.Y.) and Barton Lane (Austin, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for a plasma process includes generating plasma within a process chamber with a source power pulse and applying a bias power pulse to a substrate holder within the process chamber. A frequency of the bias power pulse increases from a first frequency value to a second frequency value during the bias power pulse. The bias power pulse occurs after the source power pulse."

The patent was filed ...