ALEXANDRIA, Va., May 5 -- United States Patent no. 12,620,561, issued on May 5, was assigned to Tokyo Electron Ltd. (Tokyo).
"Plasma processing apparatus and plasma processing method" was invented by Nobuo Matsuki (Yamanashi, Japan), Hiroyuki Matsuura (Iwate, Japan) and Taro Ikeda (Yamanashi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing apparatus includes a processing container having an opening in a sidewall, a partition wall that covers the opening and defines an internal space communicating with an inside of the processing container, and an internal electrode that passes through the partition wall, is airtightly inserted into the internal space, and is supplied with RF power. A...