US Patent Issued to Tokyo Electron on May 5 for "Atomic layer deposition of silicon nitride film using helium gas plasma" (Japanese Inventor)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,618,156, issued on May 5, was assigned to Tokyo Electron Ltd. (Tokyo).

"Atomic layer deposition of silicon nitride film using helium gas plasma" was invented by Munehito Kagaya (Nirasaki, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate processing method includes forming an adsorption layer on a substrate by supplying a silicon-containing gas to the substrate; performing a modification by generating plasma containing He; and generating plasma of a reaction gas to cause the plasma to react with the adsorption layer, wherein the forming the adsorption layer, the performing the modification, and the generating the plasma are repeated to form ...