US Patent Issued to Tokyo Electron on May 19 for "Sequential complimentary FET incorporating backside power distribution network through wafer bonding prior to formation of active devices" (New York Inventor)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,583, issued on May 19, was assigned to Tokyo Electron Ltd. (Tokyo).

"Sequential complimentary FET incorporating backside power distribution network through wafer bonding prior to formation of active devices" was invented by Jeffrey Smith (Clifton Park, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes backside power rails over a bulk semiconductor material, a first bonding dielectric layer over the backside power rails, a first tier of transistors over the first bonding dielectric layer, a second bonding dielectric layer over the first tier of transistors, and a second tier of transistors over the second bonding diel...