US Patent Issued to Tokyo Electron on May 19 for "High aspect ratio contact etching with additive gas" (New York Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,434, issued on May 19, was assigned to Tokyo Electron Ltd. (Tokyo).

"High aspect ratio contact etching with additive gas" was invented by Du Zhang (Albany, N.Y.) and Mingmei Wang (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of processing a substrate that includes: flowing a fluorocarbon, a metal halide, and dihydrogen (H2) into a plasma processing chamber, the plasma processing chamber configured to hold a substrate including a dielectric layer including silicon oxide as an etch target and a patterned hardmask including polycrystalline silicon (poly-Si) over the dielectric layer; while flowing the gases, generating a plasma i...