ALEXANDRIA, Va., March 3 -- United States Patent no. 12,567,563, issued on March 3, was assigned to Tokyo Electron Ltd. (Tokyo).
"Plasma processing apparatus and plasma processing method" was invented by Satoshi Itoh (Yamanashi, Japan), Hiroyuki Ikuta (Yamanashi, Japan), Yoshiyuki Kondo (Yamanashi, Japan), Hideki Yuasa (Yamanashi, Japan) and Soudai Emori (Yamanashi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing apparatus for generating plasma from a processing gas using microwaves and performing plasma processing on a substrate is provided. The apparatus includes a processing chamber having a substrate support on which the substrate is placed; a plurality of microwave radiation uni...