US Patent Issued to Tokyo Electron on March 3 for "Method of self-aligned dielectric wall formation for forksheet application" (New York Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,677, issued on March 3, was assigned to Tokyo Electron Ltd. (Tokyo).

"Method of self-aligned dielectric wall formation for forksheet application" was invented by Eric Chih-Fang Liu (Albany, N.Y.), Subhadeep Kal (Albany, N.Y.), Kai-Hung Yu (Albany, N.Y.) and Shihsheng Chang (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Aspects of the present disclosure provide a method for fabricating a forksheet semiconductor structure. For example, the method can include forming on a substrate a multi-layer stack including first and second semiconductor layers stacked over one another alternately, forming a cap layer over the multi-layer stack, formi...