ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,782, issued on March 3, was assigned to Tokyo Electron Ltd. (Tokyo).
"Etching method and plasma processing system" was invented by Satoshi Ohuchida (Miyagi, Japan), Masahito Yamaguchi (Miyagi, Japan) and Maju Tomura (Miyagi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An etching method includes (a) providing a substrate having a first silicon containing film and a second silicon containing film including at least a silicon containing film of which type is different from the first silicon containing film, on a substrate support in a chamber, (b) supplying a processing gas including a HF gas and a phosphorus containing gas into the chamber, a...