US Patent Issued to Tokyo Electron on March 24 for "Selective inhibition for selective metal deposition" (New York, California Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,435, issued on March 24, was assigned to Tokyo Electron Ltd. (Tokyo).

"Selective inhibition for selective metal deposition" was invented by Kai-Hung Yu (Albany, N.Y.), Robert D. Clark (Fremont, Calif.), Ryota Yonezawa (Albany, N.Y.), Hiroaki Niimi (Albany, N.Y.), Hidenao Suzuki (Albany, N.Y.), Kandabara Tapily (Albany, N.Y.), Takahiro Miyahara (Albany, N.Y.) and Cory Wajda (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for processing a substrate includes treating the substrate with a small molecular inhibitor (SMI), the substrate including a recess formed in a dielectric layer and a first metal layer in the recess, the SMI co...