US Patent Issued to Tokyo Electron on March 24 for "Methods for forming dielectric materials with selected polarization for semiconductor devices" (New York, California Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,434, issued on March 24, was assigned to Tokyo Electron Ltd. (Tokyo).

"Methods for forming dielectric materials with selected polarization for semiconductor devices" was invented by Dina H. Triyoso (Albany, N.Y.), Robert D. Clark (Fremont, Calif.), Steven P. Consiglio (Albany, N.Y.) and Kandabara N. Tapily (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Dielectric films for semiconductor devices and methods of forming. A processing method includes forming a first film of a first dielectric material on a substrate by performing a first plurality of cycles of atomic layer deposition and, thereafter, heat-treating the first film, where a ...