ALEXANDRIA, Va., March 17 -- United States Patent no. 12,580,154, issued on March 17, was assigned to Tokyo Electron Ltd. (Tokyo).
"Etching method and plasma processing apparatus" was invented by Ryutaro Suda (Miyagi, Japan), Koki Tanaka (Miyagi, Japan), Ryu Nagai (Miyagi, Japan), Masahiko Yokoi (Miyagi, Japan) and Ikko Tanaka (Miyagi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An etching method includes providing a substrate on a substrate support in a chamber of a plasma processing apparatus. The etching method further includes etching the substrate with plasma generated in the chamber, thereby forming a recess in the substrate. In the etching, an electrical bias is supplied to the substrate supp...