ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,883, issued on March 17, was assigned to Tokyo Electron Ltd. (Tokyo).
"Etching method and plasma etching apparatus" was invented by Koki Tanaka (Miyagi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma etching apparatus includes: a chamber; a support configured to support a substrate in the chamber; a gas supply configured to supply a processing gas into the chamber, the processing gas including hydrogen fluoride gas with a volume flow ratio of 30% or more with respect to a total flow rate of the processing gas; a plasma generator configured to generate a plasma from the processing gas in the chamber to etch the substrate with the plas...