US Patent Issued to Tokyo Electron on June 23 for "Method of 3D epitaxial growth for high density 3D horizontal nanosheets" (Texas, Florida Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,665, issued on June 23, was assigned to Tokyo Electron Ltd. (Tokyo).

"Method of 3D epitaxial growth for high density 3D horizontal nanosheets" was invented by Mark I. Gardner (Cedar Creek, Texas) and H. Jim Fulford (Marianna, Fla.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques herein include methods of forming channel structures for field effect transistors having a channel current path parallel to a surface of a substrate. 3D in-situ horizontal or lateral growth of the channel and source/drain regions allows for a custom doping in the 3D horizontal nanosheet direction for NMOS and PMOS devices. An ultra-short channel length is achieved w...