US Patent Issued to Tokyo Electron on June 16 for "Systems and methods for semiconductor etching" (New York Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,536, issued on June 16, was assigned to Tokyo Electron Ltd. (Tokyo).

"Systems and methods for semiconductor etching" was invented by Du Zhang (Albany, N.Y.), Scott Lefevre (Albany, N.Y.), Jeffrey Shearer (Albany, N.Y.) and Peter Biolsi (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method is provided. The method includes etching a substrate to form a recess in the substrate through a plurality of stages. A first one of the plurality of stages forms an inhibitor layer lining an initial portion of the recess based on first etchant radicals. A second one of the plurality of stages exposes the initial portion of the recess based on ions....