ALEXANDRIA, Va., July 28 -- United States Patent no. 12,695,062, issued on July 28, was assigned to Tokyo Electron Ltd. (Tokyo).

"Substrate processing method and substrate processing apparatus" was invented by Kae Kumagai (Miyagi, Japan), Motoi Takahashi (Miyagi, Japan), Ryutaro Suda (Miyagi, Japan), Maju Tomura (Miyagi, Japan), Yoshihide Kihara (Miyagi, Japan) and Takatoshi Orui (Hillsboro, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate processing method includes placing a substrate with a dielectric film on a substrate support in a chamber, and etching the dielectric film with plasm generated from a reaction gas containing an HF gas and at least one CxHyFz gas selected from the group consi...