US Patent Issued to Tokyo Electron on July 28 for "Plasma processing apparatus and potential control method" (Japanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,695,065, issued on July 28, was assigned to Tokyo Electron Ltd. (Tokyo).

"Plasma processing apparatus and potential control method" was invented by Shinya Ishikawa (Miyagi, Japan) and Daiki Hariu (Miyagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing apparatus includes: a chamber; a bias power supply that generates an electric bias; a substrate support that supports a substrate and an edge ring in the chamber, and including a first region configured to hold the substrate, a second region provided to surround the first region and hold the edge ring, a first bias electrode provided in the first region to receive the electric bia...