US Patent Issued to Tokyo Electron on July 28 for "Patterning a semiconductor substrate" (New York Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,734, issued on July 28, was assigned to Tokyo Electron Ltd. (Tokyo).

"Patterning a semiconductor substrate" was invented by Alexandra Krawicz (Albany, N.Y.), Steven Grzeskowiak (Albany, N.Y.) and Eric Chih-Fang Liu (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device, where the method includes receiving a substrate in a processing chamber, the substrate including a first patterned layer including a metal-based material; and with a gaseous etch process, trimming the first patterned layer to form a second patterned layer, the gaseous etch process including exposing the first patterned layer to an un-i...