US Patent Issued to Tokyo Electron on July 14 for "Etching method and plasma processing apparatus" (Japanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,683,122, issued on July 14, was assigned to Tokyo Electron Ltd. (Tokyo).

"Etching method and plasma processing apparatus" was invented by Taihei Matsuhashi (Kurokawa-gun, Japan) and Wakako Ishida (Kurokawa-gun, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A disclosed etching method includes (a) preparing a substrate on a substrate support in a chamber. The substrate includes a multilayer film including a plurality of first films and a plurality of second films that are alternately stacked with the plurality of first films, and a mask disposed on the multilayer film. The etching method further includes (b) etching one or more first films among th...