ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,534,803, issued on Jan. 27, was assigned to Tokyo Electron Ltd. (Tokyo).
"Film forming method" was invented by Hiroki Yamada (Nirasaki, Japan), Ryota Ifuku (Nirasaki, Japan), Takashi Matsumoto (Nirasaki, Japan) and Nobutake Kabuki (Nirasaki, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A film forming method of forming a graphene film includes a loading process of loading a substrate into a processing container, a first process of forming the graphene film on the substrate using plasma of a first processing gas that includes a carbon-containing gas, and a second process of forming a doped graphene film on at least one of the substrate and the gra...