ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,531,213, issued on Jan. 20, was assigned to Tokyo Electron Ltd. (Tokyo).
"Plasma processing apparatus" was invented by Ryoya Abe (Miyagi, Japan), Tetsuji Sato (Miyagi, Japan) and Shin Matsuura (Miyagi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing apparatus comprising: a plasma processing chamber; a substrate support; and a baffle structure to surround the substrate support. The baffle structure includes an upper baffle plate having a plurality of first openings, each of the plurality of first openings having a first width, and a lower baffle plate having a plurality of second openings, each of the plurality of second openings...