US Patent Issued to Tokyo Electron on Jan. 20 for "Method for selective exposure of wafer to corrective irradiation at a per-die level" (New York, Texas, Florida Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,529,965, issued on Jan. 20, was assigned to Tokyo Electron Ltd. (Tokyo).

"Method for selective exposure of wafer to corrective irradiation at a per-die level" was invented by Anton J. Devilliers (Clifton Park, N.Y.), Daniel J. Fulford (Ballston Lake, N.Y.), Mark I. Gardner (Cedar Creek, Texas) and H. Jim Fulford (Marianna, Fla.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of processing a substrate, including forming a photomask based on a layout of a first surface of a wafer including at least one opaque region and at least one transparent region and the first surface of the wafer being coated with a photosensitive resist; providing the photo...