ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,517, issued on Feb. 3, was assigned to Tokyo Electron Ltd. (Tokyo).
"System and method for semiconductor structure" was invented by David Eitan Barlaz (Albany, N.Y.) and Angelique Raley (Albany, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a first masking layer over a substrate, the first masking layer including a first mask line and a second mask line, heating respective top surfaces of the first mask line and the second mask line with polarized light, and forming a second masking layer over the first masking layer with an area selective deposition process. The second masking layer is thinner over a sidewall of the f...