US Patent Issued to Tokyo Electron on Feb. 24 for "Etching method and plasma processing system" (Japanese, South Korean Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,560,863, issued on Feb. 24, was assigned to Tokyo Electron Ltd. (Tokyo).

"Etching method and plasma processing system" was invented by Ryutaro Suda (Miyagi, Japan), Maju Tomura (Miyagi, Japan), Yoshihide Kihara (Miyagi, Japan), Taiki Miura (Miyagi, Japan), Jaeyoung Park (Gyeonggi-do, South Korea) and Yusuke Fukunaga (Miyagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An etching method comprises (a) providing a substrate in a chamber, the substrate including a silicon-containing film and a mask on the silicon-containing film; and (b) etching the silicon-containing film, including (b-1) etching the silicon-containing film using plasma generated ...