ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,979, issued on Feb. 24, was assigned to Tokyo Electron Ltd. (Tokyo).
"Etching method and plasma processing apparatus" was invented by Mizuki Matsuo (Miyagi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An etching method and a plasma processing apparatus form a recess with an intended shape. The etching method includes (a) providing a substrate, the substrate including a silicon-containing film and a mask on the silicon-containing film; (b) etching the silicon-containing film with a first plasma to form a recess, the first plasma generated from a first process gas; (c) supplying a second plasma to the substrate, the second plasma generated fr...