US Patent Issued to Tokyo Electron on Feb. 24 for "Densification and reduction of selectively deposited Si protective layer for mask selectivity improvement in HAR etching" (New York Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,990, issued on Feb. 24, was assigned to Tokyo Electron Ltd. (Tokyo).

"Densification and reduction of selectively deposited Si protective layer for mask selectivity improvement in HAR etching" was invented by Jinying Lin (Albany, N.Y.) and Minjoon Park (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods for the fabrication of semiconductor devices are disclosed. A method may include depositing a mask layer on a substrate, forming a protection layer on the mask layer, and modifying the protection layer such that a porosity of the protection layer is reduced. Modifying the protection layer may include densifying the protection layer. M...