US Patent Issued to Tokyo Electron on Dec. 23 for "Methods for non-isothermal wet atomic layer etching" (Texas Inventor)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,506,014, issued on Dec. 23, was assigned to Tokyo Electron Ltd. (Tokyo).

"Methods for non-isothermal wet atomic layer etching" was invented by Kate Abel (Austin, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a non-isothermal wet atomic layer etch (ALE) process for etching polycrystalline materials, such as metals, metal oxides and silicon-based materials, formed on a substrate. More specifically, the present disclosure provides various embodiments of methods that utilize thermal cycling in a wet ALE process to independently optimize the reaction temperatures utilized within individual processing steps of the wet AL...