US Patent Issued to Tokyo Electron on Dec. 2 for "Substrate processing method and substrate processing apparatus" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,488,991, issued on Dec. 2, was assigned to Tokyo Electron Ltd. (Tokyo).

"Substrate processing method and substrate processing apparatus" was invented by Hiroki Murakami (Nirasaki, Japan), Masanobu Matsunaga (Nirasaki, Japan) and Yamato Tonegawa (Nirasaki, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate processing method of etching a SiN film formed on the substrate includes supplying a HF gas at a processing temperature of 450 degrees C. or higher to etch the SiN film."

The patent was filed on March 17, 2021, under Application No. 17/906,629.

*For further information, including images, charts and tables, please visit: http://patft.uspt...