US Patent Issued to Tokyo Electron on Dec. 2 for "Non-intrusive method for 2D/3D mapping plasma parameters" (Texas Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,487,182, issued on Dec. 2, was assigned to Tokyo Electron Ltd. (Tokyo).

"Non-intrusive method for 2D/3D mapping plasma parameters" was invented by Qiang Wang (Austin, Texas), Zhiying Chen (Austin, Texas) and Peter Lowell George Ventzek (Austin, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of characterizing a plasma in a plasma processing chamber that includes: sustaining a plasma generated from a process gas in a plasma processing chamber; flowing a probe gas through the plasma processing chamber; obtaining spatially-resolved OES signals at a wavelength of an optical emission line of the probe gas within the plasma processing chamber, si...