US Patent Issued to Tokyo Electron on Dec. 16 for "3D hybrid memory using horizontally oriented conductive dielectric channel regions" (New York Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,602, issued on Dec. 16, was assigned to Tokyo Electron Ltd. (Tokyo).

"3D hybrid memory using horizontally oriented conductive dielectric channel regions" was invented by Mark I. Gardner (Albany, N.Y.), H. Jim Fulford (Albany, N.Y.) and Partha Mukhopadhyay (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices and corresponding methods of manufacturing the same are disclosed. For example, a semiconductor device includes a first transistor comprising a first channel region. The first channel region includes one or more first nanostructures formed of a semiconductor material. The semiconductor device includes a second transi...