US Patent Issued to Tokyo Electron on Aug. 4 for "Plasma processing apparatus and plasma processing method" (Japanese Inventor)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,700,575, issued on Aug. 4, was assigned to Tokyo Electron Ltd. (Tokyo).

"Plasma processing apparatus and plasma processing method" was invented by Chishio Koshimizu (Kurokawa-gun, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A disclosed plasma processing method includes a direct-current power source configured to generate a negative direct-current voltage. A bias electrode of a substrate support provided in the chamber is alternately connected to the direct-current power source and the ground. A time until a potential of the bias electrode reaches a ground potential after the bias electrode is connected to the ground is set to be longer than a ti...