US Patent Issued to Tokyo Electron on Aug. 26 for "Plasma processing method and plasma processing system" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,400,835, issued on Aug. 26, was assigned to Tokyo Electron Ltd. (Tokyo).

"Plasma processing method and plasma processing system" was invented by Satoshi Ohuchida (Miyagi, Japan), Koki Mukaiyama (Miyagi, Japan), Noboru Saito (Miyagi, Japan), Yoshihide Kihara (Miyagi, Japan) and Maju Tomura (Miyagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing method performed in a plasma processing apparatus having a chamber is provided. This method comprises: (a) providing a substrate having a film stack including a silicon oxide film and a silicon nitride film onto a substrate support in the chamber; and (b) forming a plasma from a processin...