US Patent Issued to Tokyo Electron on Aug. 25 for "Semiconductor high pressure annealing device" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,088, issued on Aug. 25, was assigned to Tokyo Electron Ltd. (Tokyo).

"Semiconductor high pressure annealing device" was invented by Cheng-Hsiung Lee (Kaohsiung, Taiwan), Chun-Hung Hung (Kaohsiung, Taiwan), Chun-Hung Hung (Kaohsiung, Taiwan) and Fu-Chieh Hsu (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor high pressure annealing device is described. The semiconductor high pressure annealing device includes a chamber body, a cover, a lifting mechanism, and a floating sealing structure. Air tightness between the chamber body and the cover is achieved by the floating sealing structure. A first sealing ring and a second ...