ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,719,019, issued on Aug. 25, was assigned to Tokyo Electron Ltd. (Tokyo).
"Plasma processing method and plasma processing apparatus" was invented by Gen Tamamushi (Kurokawa-gun, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing method according to the present disclosure includes disposing a substrate on a substrate support, supplying, into a chamber, a processing gas for processing the substrate, generating, in the chamber, a plasma from the processing gas by using a first RF signal and a second RF signal, and applying a bias signal to the substrate support, and generating the plasma includes superimposing the second RF signal on t...