US Patent Issued to Tokyo Electron on Aug. 25 for "Methods for semiconductor process chamber" (New York Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,719,025, issued on Aug. 25, was assigned to Tokyo Electron Ltd. (Tokyo).

"Methods for semiconductor process chamber" was invented by Qi Wang (Albany, N.Y.), Hamed Hajibabaeinajafabadi (Albany, N.Y.), Sergey Voronin (Albany, N.Y.) and Akiteru Ko (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for performing an etch process includes forming a first protective layer over chamber walls of a semiconductor process chamber and performing a first etch process on an exposed major surface of a first substrate loaded into the semiconductor process chamber. The exposed major surface includes a first metal oxide resist layer. After performing t...