US Patent Issued to Tokyo Electron on Aug. 18 for "Substrate processing method" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,709,795, issued on Aug. 18, was assigned to Tokyo Electron Ltd. (Tokyo).

"Substrate processing method" was invented by Hu Li (Nirasaki City, Japan) and Takeo Nakano (Nirasaki City, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate processing method of forming a film on a substrate that contains a bond between a first element and a second element and has a recess, the substrate processing method includes: preparing the substrate; modifying a surface in the recess by generating an active species of a first processing gas and exposing the substrate to the active species; and forming a flowable film in the recess. A ratio of the first element...