US Patent Issued to Tokyo Electron on Aug. 11 for "Etching method" (Japanese, American Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,909, issued on Aug. 11, was assigned to Tokyo Electron Ltd. (Tokyo).

"Etching method" was invented by Maju Tomura (Miyagi, Japan), Takatoshi Orui (Hillsboro, Ore.), Kae Kumagai (Miyagi, Japan), Ryutaro Suda (Miyagi, Japan), Satoshi Ohuchida (Miyagi, Japan), Yusuke Wako (Miyagi, Japan) and Yoshihide Kihara (Miyagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An etching method includes (a) providing a substrate in a chamber in a plasma processing apparatus. The substrate includes a silicon-containing film. The etching method further includes (b) etching the silicon-containing film with a chemical species in plasma generated from a process gas...