US Patent Issued to Tokyo Electron on April 7 for "Method of making 3D memory stacking formation with high circuit density" (Florida, Texas Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,734, issued on April 7, was assigned to Tokyo Electron Ltd. (Tokyo).

"Method of making 3D memory stacking formation with high circuit density" was invented by H. Jim Fulford (Marianna, Fla.), Mark I. Gardner (Cedar Creek, Texas) and Partha Mukhopadhyay (Oviedo, Fla.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a stack of dynamic random access memory (DRAM) cell units over a substrate in a vertical direction perpendicular to a working surface of the substrate. At least one DRAM cell unit includes a transistor and a capacitor. The capacitor includes a first metal layer, a capacitor dielectric layer positioned on the f...