US Patent Issued to Tokyo Electron on April 21 for "Semiconductor devices and methods of manufacturing the same" (New York Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,763, issued on April 21, was assigned to Tokyo Electron Ltd. (Tokyo).

"Semiconductor devices and methods of manufacturing the same" was invented by Jason Marion (Albany, N.Y.), Indroneil Roy (Albany, N.Y.), Yusuke Yoshida (Albany, N.Y.) and Yun Han (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes providing a semiconductor substrate and forming a dielectric layer over the semiconductor substrate. The method includes forming a metal layer over the dielectric layer. The method includes forming a patterned mask over the metal layer. The method includes performing a first etching process using a first etchant to form metal ...