ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,248, issued on April 14, was assigned to Tokyo Electron Ltd. (Tokyo).
"Plasma processing apparatus" was invented by Torai Iwasa (Kurokawagun, Japan), Takehiro Tanikawa (Kurokawagun, Japan), Masaya Herai (Kurokawagun, Japan), Kazuki Oshima (Kurokawagun, Japan) and Yuzuru Sakai (Kurokawagun, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing apparatus includes a plasma processing chamber, a substrate support disposed in the plasma processing chamber and including a lower electrode, an upper electrode disposed above the substrate support, a first RF signal generator coupled to the lower electrode and configured to generate a firs...